XBSC SIC DIODES
High Inrush Current Capability 650V 6A/8A/10A SiC Diodes
The new XBSC41, XBSC42, and XBSC43 devices deliver a robust 650V voltage rating with 6A, 8A, and 10A current options, giving designers the flexibility to match performance precisely to their application and operating conditions. Featuring low reverse recovery, this series significantly reduces switching losses, enabling higher efficiency and improved thermal performance in modern power conversion designs.
KEY FEATURES:
- High-speed switching operation
- Low Qrr (reverse recovery)
- Significantly lower recovery loss in reverse recovery operation compared to Si-FRD
- Improved efficiency of power supply circuits
- 650 V Low Vf
- Easy replacement for other manufacturers' products
- Low VF of 1.35V reduces losses
- Industry-Leading IFSM Performance
- High Surge Tolerance
EQUIVALENT CIRCUIT & PACKAGES:
TO-220AC TO-220FM-2
1: Cathode
2: Anode
KEY ELECTRICAL PARAMETERS:
| PART NUMBER | XBSC41A066  |
XBSC42A086 |
XBSC43A106 |
||
| Repetitive Peak Reverse Voltage | VRM | 650V | |||
| Forward Current | Tc=100℃ | IF | 6A | 8A | 10A |
| Max. Non-Continuous Forward Surge Current | PW=10ms, Tc=25℃ | IFSM | 56A | 75A | 92A |
| PW=10ms, Tc=150℃ | 46A | 62A | 74A | ||
| Forward Voltage | TYP., Tj=25℃ | VF | 1.35V | ||
| TYP., Tj=150℃ | 1.7V | ||||
| Reverse Current | VR=650V, Tj=25℃ | IR | 0.3 | 0.7 | 0.3 |
| VR=650V, Tj=150℃ | 6 | 15 | 9 | ||
| Total Capacitance | VR=1V, f=1MHz | C | 240 | 320 | 390 |
| VR=400V, f=1MHz | 30 | 38 | 45 | ||
| Total Capacitive Charge | VR=400V | QC | 12 | 15 | 18 |
| Package | TO-220AC or TO-220FM-2 | ||||
LOW FIGURE OF MERIT & HIGH SURGE IMMUNITY
Minimising the figure of merit (FOM), (Fig.1) the series significantly reduces power loss and enables high-efficiency operation, while also greatly enhancing IFSM (surge forward current) capability (Fig. 2). This ensures stable operation even in harsh environments where severe surge current or inrush current may occur, contributing to improved overall system reliability.
Figure 2: IFSM (Surge Forward Current) Capability of the XBSC41 / XBSC42 / XBSC43
Achieving both high efficiency and high reliability at a high level, this series leverages the fast-switching performance and low-loss characteristics inherent to SiC devices, while also allowing sufficient design margin during startup and inrush current events. It is well suited for a wide range of reliability-critical applications, including switching power supplies, home appliances, and general-purpose inverters.
SIMPLIFYING PFC: THE DIODE-LESS ADVANTAGE
TRADITIONAL MEDIUM/LARGE CAPACITY PFC CIRCUIT
With higher IFSM, the XBSC41/42/43 allows designers to remove the extra bypass diode normally required for inrush current protection. Simplifying the design and reducing the board area needed.
MEDIUM/LARGE CAPACITY PFC CIRCUIT USING A SIC DIODE
- Power Capacity: 200W ~ 1.5kW
- Input /Output Voltage: 100VAC ~ 240VAC → 400VDC
- Control Method: Fixed PWM Control CCM Mode (Continuous Current Mode)
- Switching Frequency: Several tens of kHz to several hundred kHz
Benefits of using SiC Diode:
- Improved Switching Losses, Higher Efficiency, and Reduced Heat Generation
- Simplification of surge countermeasure circuits
FUTURE PROOFING YOUR SUPPLY CHAIN
For Torex Semiconductor’s Silicon Carbide (SiC) Schottky Barrier Diodes, the "design and manufacturing" story is a collaborative effort between Torex and our manufacturing subsidiary, Phenitec Semiconductor.
Phenitec is the "Foundry" for the Torex Group and is responsible for the fabrication of our SiC devices.
- Bonded Substrate Technology: Phenitec has a partnership with Sicoxs Corporation. Where we use a specific technology called "SiCkrest", a bonded SiC substrate
- The Advantage: Unlike traditional bulk SiC wafers, bonded substrates use a thin layer of high-quality 4H-SiC on a more cost-effective supporting substrate. This helps Torex maintain competitive pricing while delivering high thermal performance.
While the industry struggles with external foundry delays and substrate shortages, Torex offers a different path because we own our factory (Phenitec) and control our own SiC substrates, we don't just "manage" a lead time, we guarantee it.
Partnering with Torex means bypassing the traditional vendor bottlenecks. We offer a direct line from design to silicon, ensuring that your production schedule is driven by your demand, not your supplier's limitations.
The Torex Advantage:
- Vertical Integration: From substrate to final test, we own the process.
- Zero External Conflict: You aren't competing for space on someone else's factory floor.
- Market-Leading Stability: Reliable lead times that keep your factory running.