Products - SiC-SBD
XBSC11A108CS SiC Schottky Barrier Diodes 850V, 10A
Specifications
| Property | XBSC11A108CS |
|---|---|
| Repetitive Peak Reverse Voltage (VRM) | 850 |
| Reverse Voltage (VR) | 850 |
| Forward Current Average (A) | 10 |
| Non Continous Forward Surge Current (IFSM A) | 36 |
| Forward Voltage Typ (Vf) | 1.5 |
| Forward Voltage Max (Vf) | 1.8 |
Product Description
SiC Schottky Barrier Diodes (850V, 10A)
The 850V SiC Schottky Barrier Diode 10A has significantly enhanced IFSM (surge forward current capability), ensuring stable operation even in harsh surge environments, making it an ideal product for a wide range of applications, including industrial power supplies, EV peripherals, and inverters.
