Products - P-ch

XP202A0003MR-G P-channel Power MOSFET with low on-state resistance

P-channel Power MOSFET with low on-state resistance image

Specifications


Property XP202A0003MR-G
Channel P-ch (Single)
Vdss (MAX.) -30V
Vgss (MAX.) ±20V
Id (MAX.) -3A
Rds_ON (MAX.) 0.067Ω
Driving Voltage (MIN.) -4.0V
Packages SOT-23

Product Description


The XP202A0003MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.


Features:

• Low On-State Resistance
   Rds (on) = 45mΩ @ Vgs = -10V
   Rds (on) = 67mΩ @ Vgs = -4.5V
• Ultra High-Speed Switching
• Gate Protect Diode Built-in
• Driving Voltage : -4V