Products - P-ch

XP162A11C0PR P-channel Power MOSFET with low on-state resistance

P-channel Power MOSFET with low on-state resistance image

Specifications


Property XP162A11C0PR
Channel P-ch (Single)
Vdss (MAX.) -20 ~ -30V
Vgss (MAX.) ±12 ~ 20V
Id (MAX.) -1.5 ~ -2.5A
Rds_ON (MAX.) 0.17 ~ 0.45Ω
Driving Voltage (MIN.) -2.5 ~ -4.5V
Packages SOT-89

Product Description


The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

Features

  • Low On-State Resistance
    • : Rds(on) = 0.15Ω@ Vgs = -10V
    • : Rds(on) = 0.28Ω@ Vgs = -4.5V
  • Ultra High-Speed Switching
  • Driving Voltage : -4.5V
  • Gate Protect Diode Built-in