Products - N-ch

XP161A11A1PR N-channel Power MOSFET with low on-state resistance

N-channel Power MOSFET with low on-state resistance image

Specifications


Property XP161A11A1PR
Channel N-Ch (Single)
Vdss (MAX.) 20 ~ 30V
Vgss (MAX.) ±8 ~ 20V
Id (MAX.) 3 ~ 4A
Rds_ON (MAX.) 0.05 ~ 0.18Ω
Driving Voltage (MIN.) 1.5 ~ 4.5V
Packages SOT-89

Product Description


The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently setthereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

Features:

  • Low On-State Resistance:
    • Rds(on)=0.065Ω@ Vgs=10V           
    • Rds(on)=0.105Ω@ Vgs=4.5V
  • Ultra High-Speed Switching
  • Gate Protect Diode Built-in
  • Driving Voltage : 4.5V