Products - N-ch

XP151A11B0MR N-channel Power MOSFET with low on-state resistance

N-channel Power MOSFET with low on-state resistance image

Specifications


Property XP151A11B0MR
Channel N-Ch (Single)
Vdss (MAX.) 20 ~ 30V
Vgss (MAX.) ±8 ~ 20V
Id (MAX.) 0.8 ~ 1.0A
Rds_ON (MAX.) 0.1 ~ 0.33Ω
Driving Voltage (MIN.) 1.5 ~ 4.5V
Packages SOT-23

Product Description


The XP151A11B0MR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

Now also available as Halogen & Antimony Free : XP151A11B0MR-G

Features:

  • Low On-State Resistance
    • : Rds(on) = 0.12Ω@ Vgs = 10V
    • : Rds(on) = 0.17Ω@ Vgs = 4.5V
  • Ultra High-Speed Switching
  • Gate Protect Diode Built-in
  • Driving Voltage: 4.5V

     


XP151 Internal Layout