| Property | XP231P02017R-G |
|---|---|
| Channel | P-Ch |
| Vdss (MAX.) | -30 |
| Vgss (MAX.) | ±8 |
| Id (MAX.) | -0.2 |
| Rds_ON (MAX.) | 5~8Ω |
| Driving Voltage (MIN.) | -2.5 |
| Package | SOT-723 |
XP231P02017R is general-purpose P-channel MOSFET with low on resistance and high speed switching. It can be used for various applications such as relay circuits and switching circuits. The gate protection diode is built-in as a static protection.
Furthermore, two series are in a compact SOT-723(1.2 x 1.2 x h0.5mm) package with contributing space saving.
Features
On-State ResistanceRDS(on)=5Ω@VGS =-4.5V
Driving Voltage-2.5V
Environmentally FriendlyEU RoHS Compliant, Pb Free