Property | XP223N10013R |
---|---|
Channel | N-Ch (Single) |
Vdss (MAX.) | 20 |
Vgss (MAX.) | ±8 |
Id (MAX.) | 1 |
Rds_ON (MAX.) | 0.3~10Ω |
Driving Voltage (MIN.) | 1.5 |
Packages | SOT-323 |
XP223N10013R is general-purpose N-channel MOSFET with low on resistance and high speed switching. It can be used for various applications such as relay circuits and switching circuits. The gate protection diode is built-in as a static protection.
Furthermore, XP223N10013R is in a compact SOT-323-3A(2.1 x 1.25 x h0.95mm)package with contributing space saving.
These environmentally-friendly products comply with the EU RoHS Directive and are lead-free.
Features
On-State ResistanceRDS(on)=0.3Ω @VGS =4.5V
Driving Voltage1.5V
Environmentally FriendlyEU RoHS Compliant, Pb Free