Products - N-Channel
XP161A11A1PR N-channel Power MOSFET with low on-state resistance
Specifications
| Property | XP161A11A1PR |
|---|---|
| Channel | N-Ch (Single) |
| Vdss (MAX.) | 20 ~ 30V |
| Vgss (MAX.) | ±8 ~ 20V |
| Id (MAX.) | 3 ~ 4A |
| Rds_ON (MAX.) | 0.05 ~ 0.18Ω |
| Driving Voltage (MIN.) | 1.5 ~ 4.5V |
| Packages | SOT-89 |
Product Description
The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently setthereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.
Features:
- Low On-State Resistance:
- Rds(on)=0.065Ω@ Vgs=10V
- Rds(on)=0.105Ω@ Vgs=4.5V
- Ultra High-Speed Switching
- Gate Protect Diode Built-in
- Driving Voltage : 4.5V
Composition Tables for the XP161A11A1PR N-channel Power MOSFET with low on-state resistance range
| Package | Halogen & Antimony Free Products | Composition Data |
|---|---|---|
| SOT-89 |  |
 Download PDF |
Related Products for XP161A11A1PR N-channel Power MOSFET with low on-state resistance
| Package | Halogen & Antimony Free Products | Composition Data |
|---|---|---|
| SOT-89 | |
Download PDF |