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XP162A11C0PR

 
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XP162A11C0PR series

The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

Features

  • Low On-State Resistance
    • : Rds(on) = 0.15Ω@ Vgs = -10V
    • : Rds(on) = 0.28Ω@ Vgs = -4.5V
  • Ultra High-Speed Switching
  • Driving Voltage : -4.5V
  • Gate Protect Diode Built-in

Package: SOT-89

PropertyXP162A11C0PR
TypeP-Channel
Absolute Max. Vdss Rating (V)-30
Absolute Max. Vgss Rating (V)20
Absolute Max. Id Rating (A)-2.5
Typ. Rds (ON) @ Vgs=1.5/-1.5V (Ω) 
Max. Rds (ON) @ Vgs=1.5/-1.5V (Ω) 
Typ. Rds (ON) @ Vgs=2.5/-2.5V (Ω) 
Max. Rds (ON) @ Vgs=2.5/-2.5V (Ω) 
Typ. Rds (ON) @ Vgs=4.5/-4.5V (Ω) 
Max. Rds (ON) @ Vgs=4.5/-4.5V (Ω) 
Typ. Rds (ON) @ Vgs=10/-10V (Ω) 
Max. Rds (ON) @ Vgs=10/-10V (Ω) 
Vgs (off) Min (V)-1.0
Vgs (off) Max (V)-2.5
Ciss (pF)280
Driving Voltage (V)-4.5
PackageSOT-89