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XP161A1355PR

 
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XP161A1355PR series

The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

Features:

  • Low On-State Resistance
  • Rds (on)= 0.05Ω@ Vgs = 4.5V
  • Rds (on)= 0.07Ω@ Vgs = 2.5V
  • Rds (on)= 0.15Ω@ Vgs = 1.5V
  • Ultra High-Speed Switching
  • Gate Protect Diode Built-in 
  •  Driving Voltage: 1.5V

Package: SOT-89

PropertyXP161A1355PR
TypeN-Channel
Absolute Max. Vdss Rating (V)20
Absolute Max. Vgss Rating (V)8
Absolute Max. Id Rating (A)4
Typ. Rds (ON) @ Vgs=1.5/-1.5V (Ω) 
Max. Rds (ON) @ Vgs=1.5/-1.5V (Ω) 
Typ. Rds (ON) @ Vgs=2.5/-2.5V (Ω) 
Max. Rds (ON) @ Vgs=2.5/-2.5V (Ω) 
Typ. Rds (ON) @ Vgs=4.5/-4.5V (Ω) 
Max. Rds (ON) @ Vgs=4.5/-4.5V (Ω) 
Typ. Rds (ON) @ Vgs=10/-10V (Ω) 
Max. Rds (ON) @ Vgs=10/-10V (Ω) 
Vgs (off) Min (V)0.5
Vgs (off) Max (V)1.2
Ciss (pF)390
Driving Voltage (V)1.5
PackageSOT-89