You are here: Power MOSFETs » N-ch » XP161A11A1PR

XP161A11A1PR

 
DatasheetDatasheet
Technical diagramsTechnical diagrams
SamplesSamples
FootprintFootprint

XP161A11A1PR series

The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently setthereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

Features:

  • Low On-State Resistance:
    • Rds(on)=0.065Ω@ Vgs=10V           
    • Rds(on)=0.105Ω@ Vgs=4.5V
  • Ultra High-Speed Switching
  • Gate Protect Diode Built-in
  • Driving Voltage : 4.5V

Package: SOT-89

PropertyXP161A11A1PR
TypeN-Channel
Absolute Max. Vdss Rating (V)30
Absolute Max. Vgss Rating (V)20
Absolute Max. Id Rating (A)4
Typ. Rds (ON) @ Vgs=1.5/-1.5V (Ω) 
Max. Rds (ON) @ Vgs=1.5/-1.5V (Ω) 
Typ. Rds (ON) @ Vgs=2.5/-2.5V (Ω) 
Max. Rds (ON) @ Vgs=2.5/-2.5V (Ω) 
Typ. Rds (ON) @ Vgs=4.5/-4.5V (Ω) 
Max. Rds (ON) @ Vgs=4.5/-4.5V (Ω) 
Typ. Rds (ON) @ Vgs=10/-10V (Ω) 
Max. Rds (ON) @ Vgs=10/-10V (Ω) 
Vgs (off) Min (V)1.0
Vgs (off) Max (V)2.5
Ciss (pF)270
Driving Voltage (V)4.5
PackageSOT-89