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XP151A13A0MR

 
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XP151A13A0MR series

The XP151A13A0MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

Features:

  • Low On-State Resistance
    • : Rds(on) = 0.1Ω@ Vgs = 4.5V                                        
    • : Rds(on) = 0.14Ω@ Vgs = 2.5V                                        
    • : Rds(on) = 0.25Ω@ Vgs = 1.5V
  • Ultra High-Speed Switching
  • Gate Protect Diode Built-in
  • Driving Voltage: 1.5V

Package: SOT-23

PropertyXP151A13A0MR
TypeN-Channel
Absolute Max. Vdss Rating (V)20
Absolute Max. Vgss Rating (V)8
Absolute Max. Id Rating (A)1
Typ. Rds (ON) @ Vgs=1.5/-1.5V (?) 
Max. Rds (ON) @ Vgs=1.5/-1.5V (?) 
Typ. Rds (ON) @ Vgs=2.5/-2.5V (?) 
Max. Rds (ON) @ Vgs=2.5/-2.5V (?) 
Typ. Rds (ON) @ Vgs=4.5/-4.5V (?) 
Max. Rds (ON) @ Vgs=4.5/-4.5V (?) 
Typ. Rds (ON) @ Vgs=10/-10V (?) 
Max. Rds (ON) @ Vgs=10/-10V (?) 
Vgs (off) Min (V)0.5
Vgs (off) Max (V)1.2
Ciss (pF)220
Driving Voltage (V)1.5
PackageSOT-23