XP151A11B0MR series
The XP151A11B0MR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
Now also available as Halogen & Antimony Free : XP151A11B0MR-G
Features:
- Low On-State Resistance
- : Rds(on) = 0.12Ω@ Vgs = 10V
- : Rds(on) = 0.17Ω@ Vgs = 4.5V
- Ultra High-Speed Switching
- Gate Protect Diode Built-in
- Driving Voltage: 4.5V
Package: SOT-23
| Property | XP151A11B0MR |
| Type | N-Channel |
| Absolute Max. Vdss Rating (V) | 30 |
| Absolute Max. Vgss Rating (V) | 20 |
| Absolute Max. Id Rating (A) | 1 |
| Typ. Rds (ON) @ Vgs=1.5/-1.5V (Ω) | |
| Max. Rds (ON) @ Vgs=1.5/-1.5V (Ω) | |
| Typ. Rds (ON) @ Vgs=2.5/-2.5V (Ω) | |
| Max. Rds (ON) @ Vgs=2.5/-2.5V (Ω) | |
| Typ. Rds (ON) @ Vgs=4.5/-4.5V (Ω) | |
| Max. Rds (ON) @ Vgs=4.5/-4.5V (Ω) | |
| Typ. Rds (ON) @ Vgs=10/-10V (Ω) | |
| Max. Rds (ON) @ Vgs=10/-10V (Ω) | |
| Vgs (off) Min (V) | 1.0 |
| Vgs (off) Max (V) | 3.0 |
| Ciss (pF) | 150 |
| Driving Voltage (V) | 4.5 |
| Package | SOT-23 |
