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XP162A12A6PR

 
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XP162A12A6PR series

The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

Features:

  • Low On-State Resistance
    • : Rds(on) = 0.17Ω@ Vgs = -4.5V
    • : Rds(on) = 0.3Ω@ Vgs = -2.5V
  • Ultra High-Speed Switching
  • Driving Voltage : -2.5V
  • Gate Protect Diode Built-in

Package: SOT-89

PropertyXP162A12A6PR
TypeP-Channel
Absolute Max. Vdss Rating (V)-20
Absolute Max. Vgss Rating (V)12
Absolute Max. Id Rating (A)-2.5
Typ. Rds (ON) @ Vgs=1.5/-1.5V (Ω) 
Max. Rds (ON) @ Vgs=1.5/-1.5V (Ω) 
Typ. Rds (ON) @ Vgs=2.5/-2.5V (Ω) 
Max. Rds (ON) @ Vgs=2.5/-2.5V (Ω) 
Typ. Rds (ON) @ Vgs=4.5/-4.5V (Ω) 
Max. Rds (ON) @ Vgs=4.5/-4.5V (Ω) 
Typ. Rds (ON) @ Vgs=10/-10V (Ω) 
Max. Rds (ON) @ Vgs=10/-10V (Ω) 
Vgs (off) Min (V)-0.5
Vgs (off) Max (V)-1.2
Ciss (pF)310
Driving Voltage (V)-2.5
PackageSOT-89